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Infineon FP15R12W1T4BOMA1 IGBT Module, 28 A 1200 V

About The Infineon FP15R12W1T4BOMA1 IGBT Module, 28 A 1200 V, Maximum Gate Emitter Voltage: +/-20V, Maximum Power Dissipation: 130 W, Number of Transistors: 7

Infineon FP15R12W1T4BOMA1 IGBT Module, 28 A 1200 V, Maximum Gate Emitter Voltage: +/-20V, Maximum Power Dissipation: 130 W, Number of Transistors: 7

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs

Infineon FP15R12W1T4BOMA1 IGBT Module, 28 A 1200 V

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs

Specifications of Infineon FP15R12W1T4BOMA1 IGBT Module, 28 A 1200 V

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Infineon FP15R12W1T4BOMA1 IGBT Module, 28 A 1200 V
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