Infineon N-Channel MOSFET, 43 A, 700 V, 3-Pin TO-247 IPW65R080CFDAFKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 80 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 391 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Length: 16.13mm, Maximum Operating Temperature: +150 °C
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Infineon N-Channel MOSFET, 43 A, 700 V, 3-Pin TO-247 IPW65R080CFDAFKSA1
Specifications of Infineon N-Channel MOSFET, 43 A, 700 V, 3-Pin TO-247 IPW65R080CFDAFKSA1 | |
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