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Infineon N-Channel MOSFET, 100 A, 60 V, 8-Pin TDSON BSC039N06NSATMA1

About The 1mm.1mm, Length: 6

Infineon N-Channel MOSFET, 100 A, 60 V, 8-Pin TDSON BSC039N06NSATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 5.9 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 69 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.2V, Height: 1.1mm, Length: 6.1mm

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Infineon N-Channel MOSFET, 100 A, 60 V, 8-Pin TDSON BSC039N06NSATMA1

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Infineon N-Channel MOSFET, 100 A, 60 V, 8-Pin TDSON BSC039N06NSATMA1

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Infineon N-Channel MOSFET, 100 A, 60 V, 8-Pin TDSON BSC039N06NSATMA1
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