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Infineon N-Channel MOSFET, 86 A, 40 V, 3-Pin DPAK IPD90N04S405ATMA1

About The Infineon N-Channel MOSFET, 86 A, 40 V, 3-Pin DPAK IPD90N04S405ATMA1, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.0052 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Series: OptiMOS™-T2

Infineon N-Channel MOSFET, 86 A, 40 V, 3-Pin DPAK IPD90N04S405ATMA1, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.0052 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Series: OptiMOS™-T2

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Infineon N-Channel MOSFET, 86 A, 40 V, 3-Pin DPAK IPD90N04S405ATMA1

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Infineon N-Channel MOSFET, 86 A, 40 V, 3-Pin DPAK IPD90N04S405ATMA1

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Infineon N-Channel MOSFET, 86 A, 40 V, 3-Pin DPAK IPD90N04S405ATMA1
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