Infineon P-Channel MOSFET, 18 A, 55 V, 3-Pin DPAK IRFR5505TRPBF, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 110 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 57 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 6.73mm, Maximum Operating Temperature: +150 °C
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Infineon P-Channel MOSFET, 18 A, 55 V, 3-Pin DPAK IRFR5505TRPBF
Specifications of Infineon P-Channel MOSFET, 18 A, 55 V, 3-Pin DPAK IRFR5505TRPBF | |
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