Toshiba N-Channel MOSFET, 20 A, 600 V, 5-Pin DFN TK20V60W5,LVQ(S, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 190 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 156 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Length: 8mm, Maximum Operating Temperature: +150 °C
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Toshiba N-Channel MOSFET, 20 A, 600 V, 5-Pin DFN TK20V60W5,LVQ(S
Specifications of Toshiba N-Channel MOSFET, 20 A, 600 V, 5-Pin DFN TK20V60W5,LVQ(S | |
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