Infineon FP75R12N2T7BPSA1 3 Phase IGBT, 75 A 1200 V, 31-Pin Module, Chassis Mount, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 20 mW
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Infineon FP75R12N2T7BPSA1 3 Phase IGBT, 75 A 1200 V, 31-Pin Module, Chassis Mount
Specifications of Infineon FP75R12N2T7BPSA1 3 Phase IGBT, 75 A 1200 V, 31-Pin Module, Chassis Mount | |
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Instock | instock |
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