STMicroelectronics STGF10NC60KD IGBT, 9 A 600 V, 3-Pin TO-220FP, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 25 W, Switching Speed: 1MHz, Transistor Configuration: Single, Dimensions: 10.4 x 4.6 x 16.4mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C
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STMicroelectronics STGF10NC60KD IGBT, 9 A 600 V, 3-Pin TO-220FP, Through Hole
Specifications of STMicroelectronics STGF10NC60KD IGBT, 9 A 600 V, 3-Pin TO-220FP, Through Hole | |
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