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Infineon FS150R12N2T7B54BPSA1 IGBT, 150 A 1200 V

About The Infineon FS150R12N2T7B54BPSA1 IGBT, 150 A 1200 V, Maximum Gate Emitter Voltage: 20V, Maximum Power Dissipation: 20 mW

Infineon FS150R12N2T7B54BPSA1 IGBT, 150 A 1200 V, Maximum Gate Emitter Voltage: 20V, Maximum Power Dissipation: 20 mW

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs

Infineon FS150R12N2T7B54BPSA1 IGBT, 150 A 1200 V

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs

Specifications of Infineon FS150R12N2T7B54BPSA1 IGBT, 150 A 1200 V

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Instockinstock

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Infineon FS150R12N2T7B54BPSA1 IGBT, 150 A 1200 V
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