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Infineon N-Channel MOSFET, 195 A, 40 V, 3-Pin TO-247AC IRFP7430PBF

About The Infineon N-Channel MOSFET, 195 A, 40 V, 3-Pin TO-247AC IRFP7430PBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 1.2V, Maximum Power Dissipation: 366 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 15

Infineon N-Channel MOSFET, 195 A, 40 V, 3-Pin TO-247AC IRFP7430PBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 1.3 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.9V, Minimum Gate Threshold Voltage: 2.2V, Maximum Power Dissipation: 366 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 15.87mm, Maximum Operating Temperature: +175 °C

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Infineon N-Channel MOSFET, 195 A, 40 V, 3-Pin TO-247AC IRFP7430PBF

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Infineon N-Channel MOSFET, 195 A, 40 V, 3-Pin TO-247AC IRFP7430PBF

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Infineon N-Channel MOSFET, 195 A, 40 V, 3-Pin TO-247AC IRFP7430PBF
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