onsemi N-Channel MOSFET, 35 A, 150 V, 8-Pin PQFN8 FDMS86200, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 34 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 104 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 5mm, Maximum Operating Temperature: +150 °C
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Onsemi N-Channel MOSFET, 35 A, 150 V, 8-Pin PQFN8 FDMS86200
Specifications of Onsemi N-Channel MOSFET, 35 A, 150 V, 8-Pin PQFN8 FDMS86200 | |
---|---|
Category | |
Instock | instock |
Last Updated