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Onsemi N-Channel MOSFET, 35 A, 150 V, 8-Pin PQFN8 FDMS86200

About The onsemi N-Channel MOSFET, 35 A, 150 V, 8-Pin PQFN8 FDMS86200, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 34 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 104 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 5mm, Maximum Operating Temperature: +150 °C

onsemi N-Channel MOSFET, 35 A, 150 V, 8-Pin PQFN8 FDMS86200, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 34 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 104 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 5mm, Maximum Operating Temperature: +150 °C

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Onsemi N-Channel MOSFET, 35 A, 150 V, 8-Pin PQFN8 FDMS86200

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Onsemi N-Channel MOSFET, 35 A, 150 V, 8-Pin PQFN8 FDMS86200

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Onsemi N-Channel MOSFET, 35 A, 150 V, 8-Pin PQFN8 FDMS86200
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