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STMicroelectronics N-Channel MOSFET, 17 A, 650 V, 3-Pin TO-220FP STF24NM60N

About The STMicroelectronics N-Channel MOSFET, 17 A, 650 V, 3-Pin TO-220FP STF24NM60N, Mounting Type: Through Hole, Maximum Drain Source Resistance: 190 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 30 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 16.4mm

STMicroelectronics N-Channel MOSFET, 17 A, 650 V, 3-Pin TO-220FP STF24NM60N, Mounting Type: Through Hole, Maximum Drain Source Resistance: 190 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 30 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 16.4mm

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

STMicroelectronics N-Channel MOSFET, 17 A, 650 V, 3-Pin TO-220FP STF24NM60N

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of STMicroelectronics N-Channel MOSFET, 17 A, 650 V, 3-Pin TO-220FP STF24NM60N

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STMicroelectronics N-Channel MOSFET, 17 A, 650 V, 3-Pin TO-220FP STF24NM60N
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