onsemi Dual P-Channel MOSFET, 2.3 A, 60 V, 8-Pin SOIC NDS9948, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 500 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 2 W, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -20 V, +20 V, Length: 5mm, Maximum Operating Temperature: +175 °C
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Onsemi Dual P-Channel MOSFET, 2.3 A, 60 V, 8-Pin SOIC NDS9948
Specifications of Onsemi Dual P-Channel MOSFET, 2.3 A, 60 V, 8-Pin SOIC NDS9948 | |
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