onsemi Dual N/P-Channel-Channel MOSFET, 220 mA, 410 mA, 25 V, 6-Pin SOT-363 FDG6322C
onsemi Dual N/P-Channel-Channel MOSFET, 220 mA, 410 mA, 25 V, 6-Pin SOT-363 FDG6322C, Channel Type: N, P, Package Type: SOT-363 (SC-70), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 1.65V, Maximum Power Dissipation: 300 mW, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -8 V, +8 V, Height: 1mm, Length: 2mm.9 Ω, 7 Ω, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 0.