reorder
ALWAYS Be Happy search home
c
Combo Blog
Categories
Play Games New
Electronic Components & Power & Connectors
Semiconductors
Discrete Semiconductors
MOSFETs
onsemi

Onsemi SiC N-Channel MOSFET, 44 A, 1200 V, 3-Pin TO-247 NVHL080N120SC1

About The 8V, Maximum Power Dissipation: 348 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -15 V, +25 V, Automotive Standard: AEC-Q101.onsemi SiC N-Channel MOSFET, 44 A, 1200 V, 3-Pin TO-247 NVHL080N120SC1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 162 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4

onsemi SiC N-Channel MOSFET, 44 A, 1200 V, 3-Pin TO-247 NVHL080N120SC1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 162 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.3V, Minimum Gate Threshold Voltage: 1.8V, Maximum Power Dissipation: 348 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -15 V, +25 V, Automotive Standard: AEC-Q101

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Onsemi SiC N-Channel MOSFET, 44 A, 1200 V, 3-Pin TO-247 NVHL080N120SC1

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Onsemi SiC N-Channel MOSFET, 44 A, 1200 V, 3-Pin TO-247 NVHL080N120SC1

Category
Instockinstock

Last Updated

Onsemi SiC N-Channel MOSFET, 44 A, 1200 V, 3-Pin TO-247 NVHL080N120SC1
More Varieties

Rating :- 9.66 /10
Votes :- 5