onsemi SiC N-Channel MOSFET, 44 A, 1200 V, 3-Pin TO-247 NVHL080N120SC1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 162 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.3V, Minimum Gate Threshold Voltage: 1.8V, Maximum Power Dissipation: 348 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -15 V, +25 V, Automotive Standard: AEC-Q101
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Onsemi SiC N-Channel MOSFET, 44 A, 1200 V, 3-Pin TO-247 NVHL080N120SC1
Specifications of Onsemi SiC N-Channel MOSFET, 44 A, 1200 V, 3-Pin TO-247 NVHL080N120SC1 | |
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