Vishay VS-GB75YF120UT Dual Half Bridge IGBT Module, 100 A 1200 V, 35-Pin ECONO2, PCB Mount, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 480 W, Dimensions: 107.8 x 45.4 x 13.2mm, Maximum Operating Temperature: +150 °C, Length: 107.8mm, Width: 45.4mm
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs
Vishay VS-GB75YF120UT Dual Half Bridge IGBT Module, 100 A 1200 V, 35-Pin ECONO2, PCB Mount
Specifications of Vishay VS-GB75YF120UT Dual Half Bridge IGBT Module, 100 A 1200 V, 35-Pin ECONO2, PCB Mount | |
---|---|
Category | |
Instock | instock |
Last Updated