Infineon N-Channel MOSFET, 14.1 A, 550 V, 3-Pin DPAK IPD50R380CEAUMA1, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 380 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 98 W, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 0.85V, Height: 2.41mm
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Infineon N-Channel MOSFET, 14.1 A, 550 V, 3-Pin DPAK IPD50R380CEAUMA1
Specifications of Infineon N-Channel MOSFET, 14.1 A, 550 V, 3-Pin DPAK IPD50R380CEAUMA1 | |
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