Vishay N-Channel MOSFET, 2.5 A, 500 V, 3-Pin TO-220AB IRF820PBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 3 Ω, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 50 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 10.41mm, Maximum Operating Temperature: +150 °C
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Vishay N-Channel MOSFET, 2.5 A, 500 V, 3-Pin TO-220AB IRF820PBF
Specifications of Vishay N-Channel MOSFET, 2.5 A, 500 V, 3-Pin TO-220AB IRF820PBF | |
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