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STMicroelectronics N-Channel MOSFET, 30 A, 710 V, 3-Pin D2PAK STB38N65M5

About The STMicroelectronics N-Channel MOSFET, 30 A, 710 V, 3-Pin D2PAK STB38N65M5, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 95 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 190 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +25 V, Height: 4.6mm

STMicroelectronics N-Channel MOSFET, 30 A, 710 V, 3-Pin D2PAK STB38N65M5, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 95 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 190 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +25 V, Height: 4.6mm

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

STMicroelectronics N-Channel MOSFET, 30 A, 710 V, 3-Pin D2PAK STB38N65M5

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of STMicroelectronics N-Channel MOSFET, 30 A, 710 V, 3-Pin D2PAK STB38N65M5

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STMicroelectronics N-Channel MOSFET, 30 A, 710 V, 3-Pin D2PAK STB38N65M5
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