Infineon IKW25N120T2FKSA1 IGBT, 50 A 1200 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 349 W, Transistor Configuration: Single, Dimensions: 16.13 x 5.21 x 21.1mm, Energy Rating: 4.3mJ, Gate Capacitance: 1600pF, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -40 °C
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Infineon IKW25N120T2FKSA1 IGBT, 50 A 1200 V, 3-Pin TO-247, Through Hole
Specifications of Infineon IKW25N120T2FKSA1 IGBT, 50 A 1200 V, 3-Pin TO-247, Through Hole | |
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Instock | instock |
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