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Infineon N-Channel MOSFET Transistor & Diode, 30 A, 60 V, 3-Pin DPAK IPD30N06S4L23ATMA2

About The 023 O, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 16V, Series: OptiMOS.

Infineon N-Channel MOSFET Transistor & Diode, 30 A, 60 V, 3-Pin DPAK IPD30N06S4L23ATMA2, Package Type: TO-252, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.023 O, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 16V, Series: OptiMOS

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Infineon N-Channel MOSFET Transistor & Diode, 30 A, 60 V, 3-Pin DPAK IPD30N06S4L23ATMA2

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Infineon N-Channel MOSFET Transistor & Diode, 30 A, 60 V, 3-Pin DPAK IPD30N06S4L23ATMA2

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Infineon N-Channel MOSFET Transistor & Diode, 30 A, 60 V, 3-Pin DPAK IPD30N06S4L23ATMA2
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