Infineon N-Channel MOSFET Transistor & Diode, 30 A, 60 V, 3-Pin DPAK IPD30N06S4L23ATMA2, Package Type: TO-252, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.023 O, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 16V, Series: OptiMOS
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Infineon N-Channel MOSFET Transistor & Diode, 30 A, 60 V, 3-Pin DPAK IPD30N06S4L23ATMA2
Specifications of Infineon N-Channel MOSFET Transistor & Diode, 30 A, 60 V, 3-Pin DPAK IPD30N06S4L23ATMA2 | |
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