onsemi Dual N-Channel MOSFET, 111 A, 60 V, 8-Pin DFN NVMFD5C650NLWFT1G, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 5.8 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.2V, Minimum Gate Threshold Voltage: 1.2V, Maximum Power Dissipation: 125 W, Maximum Gate Source Voltage: ±20 V, Automotive Standard: AEC-Q101
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Onsemi Dual N-Channel MOSFET, 111 A, 60 V, 8-Pin DFN NVMFD5C650NLWFT1G
Specifications of Onsemi Dual N-Channel MOSFET, 111 A, 60 V, 8-Pin DFN NVMFD5C650NLWFT1G | |
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