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Infineon N-Channel MOSFET, 80 A, 100 V, 3-Pin TO-220 IPP072N10N3GXKSA1

About The Infineon N-Channel MOSFET, 80 A, 100 V, 3-Pin TO-220 IPP072N10N3GXKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 7.2 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3

Infineon N-Channel MOSFET, 80 A, 100 V, 3-Pin TO-220 IPP072N10N3GXKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 7.2 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 150 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 10.36mm, Maximum Operating Temperature: +175 °C, MPN: IPP072N10N3 G

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Infineon N-Channel MOSFET, 80 A, 100 V, 3-Pin TO-220 IPP072N10N3GXKSA1

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Infineon N-Channel MOSFET, 80 A, 100 V, 3-Pin TO-220 IPP072N10N3GXKSA1

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Infineon N-Channel MOSFET, 80 A, 100 V, 3-Pin TO-220 IPP072N10N3GXKSA1
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    Infineon N-Channel MOSFET, 80 A, 100 V, 3-Pin TO-220 IPP072N10N3GXKSA1

    Infineon N-Channel MOSFET, 80 A, 100 V, 3-Pin TO-220 IPP072N10N3GXKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 7.2 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.

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