onsemi Dual N-Channel MOSFET, 26 A, 60 V, 8-Pin DFN NVMFD5C680NLT1G, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 41 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.2V, Minimum Gate Threshold Voltage: 1.2V, Maximum Power Dissipation: 19 W, Maximum Gate Source Voltage: ±20 V, Length: 6.1mm, Maximum Operating Temperature: +175 °C
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Onsemi Dual N-Channel MOSFET, 26 A, 60 V, 8-Pin DFN NVMFD5C680NLT1G
Specifications of Onsemi Dual N-Channel MOSFET, 26 A, 60 V, 8-Pin DFN NVMFD5C680NLT1G | |
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