ROHM Dual N-Channel MOSFET, 27 A, 80 A, 30 V, 8-Pin HSOP8 HP8S36TB, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 13.3 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1.3V, Maximum Power Dissipation: 22 W, 29 W, Maximum Gate Source Voltage: ±128 V, ±20 V, Length: 5mm, Maximum Operating Temperature: +150 °C
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
ROHM Dual N-Channel MOSFET, 27 A, 80 A, 30 V, 8-Pin HSOP8 HP8S36TB
Specifications of ROHM Dual N-Channel MOSFET, 27 A, 80 A, 30 V, 8-Pin HSOP8 HP8S36TB | |
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