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Infineon FS35R12W1T7B11BOMA1 IGBT, 35 A 1200 V AG-EASY1B-711

About The Infineon FS35R12W1T7B11BOMA1 IGBT, 35 A 1200 V AG-EASY1B-711, Maximum Gate Emitter Voltage: ±20.0V, Maximum Power Dissipation: 20 mW

Infineon FS35R12W1T7B11BOMA1 IGBT, 35 A 1200 V AG-EASY1B-711, Maximum Gate Emitter Voltage: ±20.0V, Maximum Power Dissipation: 20 mW

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs

Infineon FS35R12W1T7B11BOMA1 IGBT, 35 A 1200 V AG-EASY1B-711

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs

Specifications of Infineon FS35R12W1T7B11BOMA1 IGBT, 35 A 1200 V AG-EASY1B-711

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Infineon FS35R12W1T7B11BOMA1 IGBT, 35 A 1200 V AG-EASY1B-711
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    • Infineon FS35R12W1T7B11BOMA1 IGBT, 35 A 1200 V AG-EASY1B-711

    Infineon FS35R12W1T7B11BOMA1 IGBT, 35 A 1200 V AG-EASY1B-711

    Infineon FS35R12W1T7B11BOMA1 IGBT, 35 A 1200 V AG-EASY1B-711, Maximum Gate Emitter Voltage: ±20.

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    • Infineon FS35R12W1T7B11BOMA1 IGBT, 35 A 1200 V AG-EASY1B-711

    Infineon FS35R12W1T7B11BOMA1 IGBT, 35 A 1200 V AG-EASY1B-711

    Infineon FS35R12W1T7B11BOMA1 IGBT, 35 A 1200 V AG-EASY1B-711, Maximum Gate Emitter Voltage: ±20.0V, Maximum Power Dissipation: 20 mW.

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