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Infineon AIKW50N60CTXKSA1 IGBT, 80 A 600 V, 3-Pin PG-TO263-3

About The Infineon AIKW50N60CTXKSA1 IGBT, 80 A 600 V, 3-Pin PG-TO263-3, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 250 W

Infineon AIKW50N60CTXKSA1 IGBT, 80 A 600 V, 3-Pin PG-TO263-3, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 250 W

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs

Infineon AIKW50N60CTXKSA1 IGBT, 80 A 600 V, 3-Pin PG-TO263-3

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs

Specifications of Infineon AIKW50N60CTXKSA1 IGBT, 80 A 600 V, 3-Pin PG-TO263-3

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Infineon AIKW50N60CTXKSA1 IGBT, 80 A 600 V, 3-Pin PG-TO263-3
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