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Infineon N-Channel MOSFET, 6 A, 600 V, 3-Pin DPAK IPD60R600P7SAUMA1

About The Infineon N-Channel MOSFET, 6 A, 600 V, 3-Pin DPAK IPD60R600P7SAUMA1, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 600 mO, Maximum Gate Threshold Voltage: 4V

Infineon N-Channel MOSFET, 6 A, 600 V, 3-Pin DPAK IPD60R600P7SAUMA1, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 600 mO, Maximum Gate Threshold Voltage: 4V

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Infineon N-Channel MOSFET, 6 A, 600 V, 3-Pin DPAK IPD60R600P7SAUMA1

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Infineon N-Channel MOSFET, 6 A, 600 V, 3-Pin DPAK IPD60R600P7SAUMA1

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Infineon N-Channel MOSFET, 6 A, 600 V, 3-Pin DPAK IPD60R600P7SAUMA1
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