Infineon N-Channel MOSFET, 50 A, 150 V, 3-Pin D2PAK IPB200N15N3GATMA1, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 20 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 150 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 4.57mm, MPN: IPB200N15N3 G
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Infineon N-Channel MOSFET, 50 A, 150 V, 3-Pin D2PAK IPB200N15N3GATMA1
Specifications of Infineon N-Channel MOSFET, 50 A, 150 V, 3-Pin D2PAK IPB200N15N3GATMA1 | |
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