Infineon N-Channel MOSFET, 50 A, 150 V, 3-Pin D2PAK IPB200N15N3GATMA1
Infineon N-Channel MOSFET, 50 A, 150 V, 3-Pin D2PAK IPB200N15N3GATMA1, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 20 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 150 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 4.