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Vishay N-Channel MOSFET, 375 A, 40 V, 4-Pin PowerPAK 8 X 8L SQJQ148E-T1_GE3

About The 5V.0013 Ω, Maximum Gate Threshold Voltage: 2 → 3

Vishay N-Channel MOSFET, 375 A, 40 V, 4-Pin PowerPAK 8 x 8L SQJQ148E-T1_GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.0013 Ω, Maximum Gate Threshold Voltage: 2 → 3.5V

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Vishay N-Channel MOSFET, 375 A, 40 V, 4-Pin PowerPAK 8 X 8L SQJQ148E-T1_GE3

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Vishay N-Channel MOSFET, 375 A, 40 V, 4-Pin PowerPAK 8 X 8L SQJQ148E-T1_GE3

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Vishay N-Channel MOSFET, 375 A, 40 V, 4-Pin PowerPAK 8 X 8L SQJQ148E-T1_GE3
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    • Vishay N-Channel MOSFET, 375 A, 40 V, 4-Pin PowerPAK 8 x 8L SQJQ148E-T1_GE3

    Vishay N-Channel MOSFET, 375 A, 40 V, 4-Pin PowerPAK 8 x 8L SQJQ148E-T1_GE3

    0013 Ω, Maximum Gate Threshold Voltage: 2 → 3.Vishay N-Channel MOSFET, 375 A, 40 V, 4-Pin PowerPAK 8 x 8L SQJQ148E-T1_GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.5V.

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    • Vishay N-Channel MOSFET, 375 A, 40 V, 4-Pin PowerPAK 8 x 8L SQJQ148E-T1_GE3

    Vishay N-Channel MOSFET, 375 A, 40 V, 4-Pin PowerPAK 8 x 8L SQJQ148E-T1_GE3

    Vishay N-Channel MOSFET, 375 A, 40 V, 4-Pin PowerPAK 8 x 8L SQJQ148E-T1_GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.0013 Ω, Maximum Gate Threshold Voltage: 2 → 3.5V.

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