Vishay N-Channel MOSFET, 2.9 A, 800 V, 3-Pin IPAK SIHU2N80AE-GE3, Package Type: IPAK (TO-251), Mounting Type: Through Hole, Maximum Drain Source Resistance: 2.5 Ω, Maximum Gate Threshold Voltage: 2 → 4V
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Vishay N-Channel MOSFET, 2.9 A, 800 V, 3-Pin IPAK SIHU2N80AE-GE3
Specifications of Vishay N-Channel MOSFET, 2.9 A, 800 V, 3-Pin IPAK SIHU2N80AE-GE3 | |
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