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Vishay N-Channel MOSFET, 2.9 A, 800 V, 3-Pin IPAK SIHU2N80AE-GE3

About The Vishay N-Channel MOSFET, 2.5 Ω, Maximum Gate Threshold Voltage: 2 → 4V

Vishay N-Channel MOSFET, 2.9 A, 800 V, 3-Pin IPAK SIHU2N80AE-GE3, Package Type: IPAK (TO-251), Mounting Type: Through Hole, Maximum Drain Source Resistance: 2.5 Ω, Maximum Gate Threshold Voltage: 2 → 4V

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Vishay N-Channel MOSFET, 2.9 A, 800 V, 3-Pin IPAK SIHU2N80AE-GE3

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Vishay N-Channel MOSFET, 2.9 A, 800 V, 3-Pin IPAK SIHU2N80AE-GE3

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Vishay N-Channel MOSFET, 2.9 A, 800 V, 3-Pin IPAK SIHU2N80AE-GE3
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