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Infineon AIKQ200N75CP2XKSA1 IGBT, 200 A 750 V TO247PLUS

About The 07 kW, Number of Transistors: 3.Infineon AIKQ200N75CP2XKSA1 IGBT, 200 A 750 V TO247PLUS, Maximum Gate Emitter Voltage: 15V, Maximum Power Dissipation: 1

Infineon AIKQ200N75CP2XKSA1 IGBT, 200 A 750 V TO247PLUS, Maximum Gate Emitter Voltage: 15V, Maximum Power Dissipation: 1.07 kW, Number of Transistors: 3

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs

Infineon AIKQ200N75CP2XKSA1 IGBT, 200 A 750 V TO247PLUS

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs

Specifications of Infineon AIKQ200N75CP2XKSA1 IGBT, 200 A 750 V TO247PLUS

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Infineon AIKQ200N75CP2XKSA1 IGBT, 200 A 750 V TO247PLUS
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    • Infineon AIKQ200N75CP2XKSA1 IGBT, 200 A 750 V TO247PLUS

    Infineon AIKQ200N75CP2XKSA1 IGBT, 200 A 750 V TO247PLUS

    07 kW, Number of Transistors: 3.Infineon AIKQ200N75CP2XKSA1 IGBT, 200 A 750 V TO247PLUS, Maximum Gate Emitter Voltage: 15V, Maximum Power Dissipation: 1.

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    • Infineon AIKQ200N75CP2XKSA1 IGBT, 200 A 750 V TO247PLUS

    Infineon AIKQ200N75CP2XKSA1 IGBT, 200 A 750 V TO247PLUS

    Infineon AIKQ200N75CP2XKSA1 IGBT, 200 A 750 V TO247PLUS, Maximum Gate Emitter Voltage: 15V, Maximum Power Dissipation: 1.07 kW, Number of Transistors: 3.

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    • HARTING Heavy Duty Power Connector Insert, 40A, Male, Han Q Series, 6 Contacts

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