Infineon N-Channel MOSFET, 90 A, 60 V, 3-Pin DPAK IPD025N06NATMA1, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 3.8 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 167 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 6.73mm, Maximum Operating Temperature: +175 °C
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Infineon N-Channel MOSFET, 90 A, 60 V, 3-Pin DPAK IPD025N06NATMA1
Specifications of Infineon N-Channel MOSFET, 90 A, 60 V, 3-Pin DPAK IPD025N06NATMA1 | |
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