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Infineon IGB50N60TATMA1 IGBT, 90 A 600 V, 3-Pin PG-TO263-3

About The Infineon IGB50N60TATMA1 IGBT, 90 A 600 V, 3-Pin PG-TO263-3, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 333 W

Infineon IGB50N60TATMA1 IGBT, 90 A 600 V, 3-Pin PG-TO263-3, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 333 W

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs

Infineon IGB50N60TATMA1 IGBT, 90 A 600 V, 3-Pin PG-TO263-3

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs

Specifications of Infineon IGB50N60TATMA1 IGBT, 90 A 600 V, 3-Pin PG-TO263-3

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Infineon IGB50N60TATMA1 IGBT, 90 A 600 V, 3-Pin PG-TO263-3
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