Infineon N-Channel MOSFET Transistor & Diode, 12 A, 40 V, 3-Pin D2PAK IPB015N04NGATMA1, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.0015 O, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Series: OptiMOS 3
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Infineon N-Channel MOSFET Transistor & Diode, 12 A, 40 V, 3-Pin D2PAK IPB015N04NGATMA1
Specifications of Infineon N-Channel MOSFET Transistor & Diode, 12 A, 40 V, 3-Pin D2PAK IPB015N04NGATMA1 | |
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