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Infineon FF600R12ME4B72BOSA1 Dual IGBT Module, 600 A 1200 V, 11-Pin ECONODUAL

About The Infineon FF600R12ME4B72BOSA1 Dual IGBT Module, 600 A 1200 V, 11-Pin ECONODUAL, Maximum Gate Emitter Voltage: 20V, Maximum Power Dissipation: 20 mW

Infineon FF600R12ME4B72BOSA1 Dual IGBT Module, 600 A 1200 V, 11-Pin ECONODUAL, Maximum Gate Emitter Voltage: 20V, Maximum Power Dissipation: 20 mW

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs

Infineon FF600R12ME4B72BOSA1 Dual IGBT Module, 600 A 1200 V, 11-Pin ECONODUAL

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs

Specifications of Infineon FF600R12ME4B72BOSA1 Dual IGBT Module, 600 A 1200 V, 11-Pin ECONODUAL

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Infineon FF600R12ME4B72BOSA1 Dual IGBT Module, 600 A 1200 V, 11-Pin ECONODUAL
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