Infineon N-Channel MOSFET, 61 A, 55 V, 3-Pin IPAK IRLU3915PBF, Package Type: IPAK (TO-251), Mounting Type: Through Hole, Maximum Drain Source Resistance: 17 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 120 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -16 V, +16 V, Forward Diode Voltage: 1.3V, Height: 6.22mm, Length: 6.73mm
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Infineon N-Channel MOSFET, 61 A, 55 V, 3-Pin IPAK IRLU3915PBF
Specifications of Infineon N-Channel MOSFET, 61 A, 55 V, 3-Pin IPAK IRLU3915PBF | |
---|---|
Category | |
Instock | instock |
Last Updated