Nexperia N-Channel MOSFET, 850 mA, 30 V, 3-Pin SOT-23 BSH103,215, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 400 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 0.4V, Maximum Power Dissipation: 500 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -8 V, +8 V, Length: 3mm, Maximum Operating Temperature: +150 °C
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Nexperia N-Channel MOSFET, 850 MA, 30 V, 3-Pin SOT-23 BSH103,215
Specifications of Nexperia N-Channel MOSFET, 850 MA, 30 V, 3-Pin SOT-23 BSH103,215 | |
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