Infineon N-Channel MOSFET, 75 A, 100 V, 3-Pin TO-220AB IRFB4710PBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 14 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5.5V, Minimum Gate Threshold Voltage: 3.5V, Maximum Power Dissipation: 3.8 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 8.77mm
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Infineon N-Channel MOSFET, 75 A, 100 V, 3-Pin TO-220AB IRFB4710PBF
Specifications of Infineon N-Channel MOSFET, 75 A, 100 V, 3-Pin TO-220AB IRFB4710PBF | |
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