Infineon N-Channel MOSFET, 100 A, 100 V, 8-Pin TDSON BSC035N10NS5ATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 3.5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.8V, Minimum Gate Threshold Voltage: 2.2V, Maximum Power Dissipation: 156 W, Transistor Configuration: Single, Maximum Gate Source Voltage: 20 V, Length: 5.49mm, Maximum Operating Temperature: +150 °C
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Infineon N-Channel MOSFET, 100 A, 100 V, 8-Pin TDSON BSC035N10NS5ATMA1
Specifications of Infineon N-Channel MOSFET, 100 A, 100 V, 8-Pin TDSON BSC035N10NS5ATMA1 | |
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