Infineon IKB20N60H3ATMA1 IGBT, 40 A 600 V, 3-Pin PG-TO263-3, Through Hole
About The Infineon IKB20N60H3ATMA1 IGBT, 40 A 600 V, 3-Pin PG-TO263-3, Through Hole, Maximum Gate Emitter Voltage: +/-20V, Maximum Power Dissipation: 170 W
Infineon IKB20N60H3ATMA1 IGBT, 40 A 600 V, 3-Pin PG-TO263-3, Through Hole, Maximum Gate Emitter Voltage: +/-20V, Maximum Power Dissipation: 170 W
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs
Infineon IKB20N60H3ATMA1 IGBT, 40 A 600 V, 3-Pin PG-TO263-3, Through Hole
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs
Specifications of Infineon IKB20N60H3ATMA1 IGBT, 40 A 600 V, 3-Pin PG-TO263-3, Through Hole | |
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| Category | |
| Instock | instock |
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