Onsemi FGH75T65SQDNL4, P-Channel IGBT, 200 A 650 V, 4-Pin TO-247, Through Hole
About The 2 x 22.8 x 5
onsemi FGH75T65SQDNL4, P-Channel IGBT, 200 A 650 V, 4-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 375 W, Number of Transistors: 1, Switching Speed: 1MHz, Transistor Configuration: Single, Length: 15.8mm, Width: 5.2mm, Height: 22.74mm, Dimensions: 15.8 x 5.2 x 22.74mm
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs
Onsemi FGH75T65SQDNL4, P-Channel IGBT, 200 A 650 V, 4-Pin TO-247, Through Hole
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs
Specifications of Onsemi FGH75T65SQDNL4, P-Channel IGBT, 200 A 650 V, 4-Pin TO-247, Through Hole | |
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