Nexperia N-Channel MOSFET, 120 A, 60 V, 3-Pin D2PAK PSMN1R7-60BS,118, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 3.1 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 306 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 4.5mm
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Nexperia N-Channel MOSFET, 120 A, 60 V, 3-Pin D2PAK PSMN1R7-60BS,118
Specifications of Nexperia N-Channel MOSFET, 120 A, 60 V, 3-Pin D2PAK PSMN1R7-60BS,118 | |
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