Vishay Dual N-Channel MOSFET, 16.3 A, 850 V, 3-Pin TO-247AC, Mounting Type: Through Hole, Maximum Drain Source Resistance: 0.25 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Series: E Series, MPN: SIHG21N80AEF-GE3
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Vishay Dual N-Channel MOSFET, 16.3 A, 850 V, 3-Pin TO-247AC
Specifications of Vishay Dual N-Channel MOSFET, 16.3 A, 850 V, 3-Pin TO-247AC | |
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