Onsemi NGTB35N65FL2WG IGBT, 70 A 650 V, 3-Pin TO-247, Through Hole
About The onsemi NGTB35N65FL2WG IGBT, 70 A 650 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 300 W, Switching Speed: 1MHz, Transistor Configuration: Single, Length: 16.08mm, Maximum Operating Temperature: +175 °C
onsemi NGTB35N65FL2WG IGBT, 70 A 650 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 300 W, Switching Speed: 1MHz, Transistor Configuration: Single, Length: 16.26mm, Width: 5.3mm, Height: 21.08mm, Dimensions: 16.26 x 5.3 x 21.08mm, Maximum Operating Temperature: +175 °C
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs
Onsemi NGTB35N65FL2WG IGBT, 70 A 650 V, 3-Pin TO-247, Through Hole
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs
Specifications of Onsemi NGTB35N65FL2WG IGBT, 70 A 650 V, 3-Pin TO-247, Through Hole | |
|---|---|
| Category | |
| Instock | instock |
Last Updated
Rating :- 9.82 /10
Votes :- 6
