Vishay N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAK 1212-8SH SISHA10DN-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.2V, Minimum Gate Threshold Voltage: 1.1V, Maximum Power Dissipation: 39 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -16 V, +20 V, Length: 3.3mm, Maximum Operating Temperature: +150 °C
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Vishay N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAK 1212-8SH SISHA10DN-T1-GE3
Specifications of Vishay N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAK 1212-8SH SISHA10DN-T1-GE3 | |
---|---|
Category | |
Instock | instock |
Last Updated