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Vishay N-Channel MOSFET, 41 A, 600 V, 3-Pin TO-220AB SIHP068N60EF-GE3

About The Vishay N-Channel MOSFET, 41 A, 600 V, 3-Pin TO-220AB SIHP068N60EF-GE3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 0.068 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V

Vishay N-Channel MOSFET, 41 A, 600 V, 3-Pin TO-220AB SIHP068N60EF-GE3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 0.068 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Vishay N-Channel MOSFET, 41 A, 600 V, 3-Pin TO-220AB SIHP068N60EF-GE3

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Vishay N-Channel MOSFET, 41 A, 600 V, 3-Pin TO-220AB SIHP068N60EF-GE3

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Vishay N-Channel MOSFET, 41 A, 600 V, 3-Pin TO-220AB SIHP068N60EF-GE3
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