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DiodesZetex N-Channel MOSFET, 407 MA, 60 V, 3-Pin X1-DFN1006 Diodes Inc DMN62D1LFB-7B

About The 07mm, Maximum Operating Temperature: +150 °C.6V, Maximum Power Dissipation: 500 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Length: 1

DiodesZetex N-Channel MOSFET, 407 mA, 60 V, 3-Pin X1-DFN1006 Diodes Inc DMN62D1LFB-7B, Maximum Continuous Drain Current: 407 mA, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 3 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Minimum Gate Threshold Voltage: 0.6V, Maximum Power Dissipation: 500 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Length: 1.07mm, Maximum Operating Temperature: +150 °C

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

DiodesZetex N-Channel MOSFET, 407 MA, 60 V, 3-Pin X1-DFN1006 Diodes Inc DMN62D1LFB-7B

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of DiodesZetex N-Channel MOSFET, 407 MA, 60 V, 3-Pin X1-DFN1006 Diodes Inc DMN62D1LFB-7B

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DiodesZetex N-Channel MOSFET, 407 MA, 60 V, 3-Pin X1-DFN1006 Diodes Inc DMN62D1LFB-7B
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