Renesas Electronics Silicon N-Channel MOSFET, 40 A, 60 V, 4-Pin LFPAK, SOT-669 Renesas RJK0656DPB-00#J5, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.0056 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Number of Elements per Chip: 1
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Renesas Electronics Silicon N-Channel MOSFET, 40 A, 60 V, 4-Pin LFPAK, SOT-669 Renesas RJK0656DPB-00#J5
Specifications of Renesas Electronics Silicon N-Channel MOSFET, 40 A, 60 V, 4-Pin LFPAK, SOT-669 Renesas RJK0656DPB-00#J5 | |
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